Efficient High-Power Gallium Nitride FETs from Nexperia
Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia’s normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.
Power GaN FETs demonstrate superior performance in various solutions:
- Hard switching for AC-DC Totem pole PFC applications
- LLC phase shift full-bridge (resonant or fixed frequency) for soft-switching applications
- All DC-AC inverter topologies
- AC-AC matrix converters using bidirectional switches
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Links, Documents and Videos
Watch our videos to learn more about Power GaN FETs as well as powertrain electrification. In addition, get free access to datasheets and application notes.