Efficient High-Power Gallium Nitride FETs from Nexperia

Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia’s normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design. 

Power GaN FETs demonstrate superior performance in various solutions:

  • Hard switching for AC-DC Totem pole PFC applications
  • LLC phase shift full-bridge (resonant or fixed frequency) for soft-switching applications
  • All DC-AC inverter topologies
  • AC-AC matrix converters using bidirectional switches

Win free GaN FET samples

Participate on our raffle for the chance to win a set of high-power Gallium Nitride FETs!

Related Resources: 
Links, Documents and Videos 
Watch our videos to learn more about Power GaN FETs as well as powertrain electrification. In addition, get free access to datasheets and application notes.

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