Wide Bandgap Solutions

Featured Articles

Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and electric vehicles. These wide bandgap (WBG) materials will power future applications for high performance in Solar Power, Vehicle Electrification, Cloud Computing, EV Charging and other applications.

650V SiC Diodes Offer Higher Efficiency and Lower System Costs

ON Semiconductor has extended its SiC diode portfolio with a new family of 650V Silicon Carbide (SiC) Schottky diodes which provide excellent fast-switching performance and high efficiency in Power Factor Correction (PFC) circuits and boost converters. Read More »

900V SiC MOSFETs Provide High Efficiency and Support Fast Switching Speeds

Introducing a family of 900V-rated SiC MOSFETs which provide wide-ranging improvements in performance over that of equivalent silicon devices, offering lower losses, support for higher operating temperatures, faster switching, lower EMI and higher reliability. The new 900V MOSFETs are intended for use in demanding applications including Uninterruptible Power Supplies (UPS) and server power supplies. Read More »

1,200V SiC MOSFETs Enable Designers to Achieve Higher Efficiency and Power Density in Switching Power Supplies

ON Semiconductor has introduced a family of 1,200V-rated SiC MOSFETs. They are intended for use in demanding applications such as solar power inverters, on-board charging for Electric Vehicles (EVs), server power supplies, and EV charging stations. Read More »

High-Voltage SiC Diodes Feature Superior Switching Capability and Higher Efficiency

Designers of high-voltage power systems can benefit from superior efficiency as well as faster switching with lower losses by adopting the latest SiC Schottky diodes from ON Semiconductor. The range of diodes for high-voltage power designs includes multiple 1,200V-rated devices, as well as the 1,700V NDSH25170A. Read More »

High-Speed Driver Ideal for GaN Power Switches

The NCP51820 is a high-speed gate driver which meets the demanding requirements of driving Gallium Nitride (GaN) power switches in offline half- and full-bridge power topologies. It is suitable for use with both the enhancement mode (e-mode) and Gate Injection Transistor (GIT) types of High-Electron Mobility Transistor (HEMT) GaN switches. Read More » 

SiC MOSFET Drivers Provide Wide Choice of Optimized Gate Voltage Outputs

ON Semiconductor supplies a series of gate drivers which are suitable for circuits based on SiC MOSFET power switches. Many can also be used to drive silicon IGBTs. These gate drivers provide an optimized gate-drive voltage and feature low rise and fall times to support the fast-switching characteristics of SiC MOSFETs. The series includes the NCP51705, a device primarily intended for driving SiC MOSFETs. Read More »

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Wide Bandgap Solutions
Featured Articles Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and electric vehicles. These wide bandgap (WBG)... Read Article